Transistor contact area enhancement

ABSTRACT

A semiconductor device includes a semiconductor body that includes a surface and a first region and a second region formed in the semiconductor body, where a channel region is located between the first region and the second region, and where the second region includes a sub-region that includes a blanket dopant; a first conductive contact on the surface of the semiconductor body above the first region; a semiconductor-on-insulator (SOI) at a bottom of the first region; and a pocket channel dopant (PCD) formed in the channel, where a first portion of the PCD is adjacent to a first portion of the SOI; and a second conductive contact on a bottom portion of the sub-region, where a first portion of the second conductive contact is adjacent to a second portion of the SOI, and a second portion of the second conductive contact is adjacent to a second portion of the PCD.

TECHNICAL FIELD

Embodiments of the present disclosure relate to the field ofsemiconductor devices and processing and, in particular, transistorcontact area enhancement.

BACKGROUND

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory devices on a chip,lending to the fabrication of products with increased capacity. Thedrive for more capacity, however, is not without issue. The necessity tooptimize the performance of each device becomes increasinglysignificant.

The further reduction in scale of integrated circuit devices has calledfor the increased usage of non-planar transistors. As device pitchesbecome smaller and smaller, contact area is reduced. As contact area isreduced, contact resistance becomes increasingly important.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be readily understood by the following detaileddescription in conjunction with the accompanying drawings. To facilitatethis description, like reference numerals designate like structuralelements or components. Embodiments are illustrated by way of exampleand not by way of limitation in the figures of the accompanyingdrawings.

FIGS. 1A, 1B, and 1C illustrate a semiconductor device, in accordancewith various embodiments, where:

FIG. 1A illustrates a front view of the semiconductor device;

FIG. 1B illustrates a cross-sectional view of the semiconductor devicetaken along the line AA of FIG. 1A; and

FIG. 1C illustrates a cross-sectional view of the semiconductor devicetaken along the line BB of FIG. 1A.

FIGS. 2A, 2B, 2C, 2D, 2E, and 2F illustrate various stages of formationof the semiconductor device depicted in FIG. 1A, in accordance withvarious embodiments, where:

FIG. 2A illustrates a three-dimensional view of a starting structure forformation of the semiconductor device;

FIG. 2B illustrates a cross-sectional view of the structure of FIG. 2Ataken along the line CC of FIG. 2A;

FIG. 2C illustrates the structure of FIG. 2B that includes the line AA′;

FIG. 2D illustrates a cross-sectional view of the structure of FIG. 2Ctaken along the line AA′ of FIG. 2C to illustrate sub-region and ablanket dopant;

FIG. 2E illustrates the structure of FIG. 2B that includes asemiconductor-on-insulator (SOI) and a pocket channel dopant (PCD); and

FIG. 2F illustrates the structure of FIG. 2E that further a secondconductive contact.

FIG. 3 illustrates an operation flow for forming the semiconductordevice illustrated in FIG. 1A.

FIG. 4 illustrates a front view of another semiconductor device, inaccordance with various embodiments.

FIG. 5 illustrates an example electronic device that may include asemiconductor device illustrated in FIG. 1A or FIG. 4, in accordancewith various embodiments.

FIG. 6 illustrates a processor that may include various embodiments ofthe semiconductor device illustrated in FIG. 1A, coupled with a memory.

DESCRIPTION OF THE EMBODIMENTS

Transistor contact area enhancement is described. The following detaileddescription refers to the accompanying drawings. The same referencenumbers may be used in different drawings to identify the same orsimilar elements. In the following description, for purposes ofexplanation and not limitation, specific details are set forth such asparticular structures, architectures, interfaces, techniques, etc., inorder to provide a thorough understanding of the various aspects of theclaimed embodiments. However, it will be apparent to those skilled inthe art having the benefit of the present disclosure that the variousaspects of the embodiments claimed may be practiced in other examplesthat depart from these specific details. In certain instances,descriptions of well-known devices, circuits, integrated circuit designlayouts, and methods are omitted or simplified so as not to obscure thedescription of embodiments of the present disclosure with unnecessarydetail. Furthermore, it is to be understood that the various embodimentsshown in the Figures are illustrative representations and are notnecessarily drawn to scale. For example, the heights, widths, depths,thicknesses, etc. of substrates, layers, regions, etc., may beexaggerated for clarity. Further, it is to be understood that thevarious embodiments shown in the Figures may include elements that arepresent but may be hidden from view in a particular Figure or Figures.

Various aspects of the illustrative embodiments may be described usingterms commonly employed by those skilled in the art to convey thesubstance of their work to others skilled in the art. However, it willbe apparent to those skilled in the art that alternate embodiments maybe practiced with only some of the described aspects. For purposes ofexplanation, specific numbers, materials, and configurations may be setforth in order to provide a thorough understanding of the illustrativeembodiments. However, it will be apparent to one skilled in the art thatalternate embodiments may be practiced without the specific details. Inother instances, well-known features are omitted or simplified in ordernot to obscure the illustrative embodiments.

The phrase “in an embodiment,” “in embodiments,” “in variousembodiments,” “in some embodiments,” and the like are used repeatedly.The phrase generally does not refer to the same embodiments; however, itmay, and thus may refer to one or more of the same or differentembodiments. The terms “comprising,” “having,” and “including” aresynonymous, unless the context dictates otherwise. The phrase “A or B”means (A), (B), or (A and B).

The following description may use certain terminology for the purpose ofreference only, and thus are not intended to be limiting. For example,perspective-based descriptions such as “upper”, “lower”, “above”, and“below”, and “under” may refer to directions in the drawings to whichreference is made. For another example, terms such as “front”, “back”,“top”, “bottom”, “rear”, and “side” may describe the orientation and/orlocation of portions of the component within a consistent but arbitraryframe of reference which is made clear by reference to the text and theassociated drawings describing the component under discussion. Suchterminology may include the words specifically mentioned above,derivatives thereof, and words of similar import. Such descriptions aremerely used to facilitate the discussion and are not intended torestrict the application of embodiments described herein to anyparticular orientation.

The term “coupled with” or “coupled to,” along with their derivatives,may be used herein. “Coupled” may mean one or more of the following.“Coupled” may mean that two or more elements are in direct physical orelectrical contact. However, “coupled” may also mean that two or moreelements indirectly contact each other, but yet still cooperate orinteract with each other, and may mean that one or more other elementsare coupled or connected between the elements that are said to becoupled with each other. The term “directly coupled” may mean that twoor more elements are in direct contact.

It will be understood that when an element, such as, for example, alayer, region, or substrate, is referred to as being “on” anotherelement or surface of another element, it may be directly on the otherelement or surface of the element, or intervening elements may also bepresent. Further, it will be understood that when the element isreferred to as being “on” another element or surface of another element,it may be “on” the other element or surface of the other elementregardless of whether the elements are in a vertical orientation, ahorizontal orientation, or an angled orientation. Further, to say that afirst element is formed, deposited, or otherwise disposed on orotherwise on, a second element, may mean that the first element isformed, deposited, or disposed over the second element or surface of thesecond element, and at least a part of the first element may be indirect contact (e.g., direct physical and/or electrical contact) orindirect contact (e.g., having one or more other elements between thefirst element and the second element) with at least a part of the secondelement.

Various operations may be described as multiple discrete operations, inturn, in a manner that is most helpful in understanding the illustrativeembodiments; however, the order of description should not be construedas to imply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation. Further, example embodiments may be described as a processor operation flow depicted as a flowchart, a flow diagram, a data flowdiagram, a structure diagram, or a block diagram. Although a flowchartmay describe the operations as a sequential process or operation flow,many of the operations may be performed in parallel, concurrently, orsimultaneously. In addition, the order of the operations may bere-arranged. A process or operation flow may be terminated when itsoperations are completed, but may also have additional operations notincluded in the figure(s). A process or operation flow may correspond toa method, a function, a procedure, a subroutine, a subprogram, and thelike. When a process or operation flow corresponds to a function, itstermination may correspond to a return of the function to the callingfunction and/or the main function.

FIGS. 1A, 1B, and 1C illustrate a semiconductor device, in accordancewith various embodiments. FIG. 1A illustrates a front view ofsemiconductor device 100. Semiconductor device 100 may be, for example,any type of non-planar transistor, such as, for example, but not limitedto, a tri-gate transistor, a fin field-effect transistor (FINFET), atunnel FET (TFET), an omega-FET, a double-gate transistor, or ananowire. In an embodiment, semiconductor device 100 may be ametal-oxide-semiconductor FET (MOSFET) that may be a three-dimensionalMOSFET. Semiconductor device 100 may be an isolated device or may be onedevice in a plurality of nested devices. Further, additionalinterconnect wiring may be fabricated in order to integrate such devicesinto an integrated circuit.

Semiconductor device 100 may include a semiconductor body 104.Semiconductor body 104 may also be referred to as a fin. Semiconductorbody 104 may include a first surface 106 and a second surface 108 (notshown in FIG. 1A), where the first surface 106 is opposite the secondsurface 108. First surface 106 or second surface 108 may be referred toherein as a surface. For example, first surface 106 may be a topsurface, and second surface 108 may be a bottom surface that isvertically opposite the top surface, or, for example, first surface 106may be a bottom surface, and second surface 108 may be a top surfacethat is vertically opposite the bottom surface, or, for example, firstsurface 106 may be a first side surface, such as, for example, a leftside surface or a right side surface, and second surface 108 may be asecond side surface, such as, for example, a right side surface or aleft side surface, that is horizontally opposite the first side surface,or first surface 106 may be a first angled surface, and second surface108 may be a second angled surface that is across from the first angledsurface. Further, a top surface of a device or element may be referredto as a front side, while a bottom of a device or element may bereferred to as a back side. Semiconductor body 104 may be formed fromany material that may be reversibly altered from an insulating state toa conductive state by application of external electrical controls. Forexample, semiconductor body 104 may be formed from semiconductormaterial such as, but not limited to, silicon, germanium, silicongermanium, indium antimonide, lead telluride, indium arsenide, indiumphosphide, gallium phosphide, gallium arsenide, indium gallium arsenide,gallium antimonide.

Semiconductor device 100 may further include a first region 110 formedin semiconductor body 104 and a second region 120 formed insemiconductor body 104. Thus, semiconductor body 104 may include firstregion 110 and second region 120 formed in semiconductor body 104.Second region 120 may be located at a side of semiconductor body 104that is opposite a side of semiconductor body 104 that includes firstregion 110. For example, as described below and shown in FIG. 1A, firstregion 110 and second region 120 may be formed in semiconductor body 104on opposite sides of channel region 130 (described below). In anembodiment, first region 110 may be a drain region and second region 120may be a source region. In another embodiment, first region 110 may be asource region and second region 120 may be a drain region. In anembodiment, the material of semiconductor body 104 may be removed andreplaced with another semiconductor material, e.g., by epitaxialdeposition, to form first region 110 and second region 120, where firstregion 110 and second region 120 may be formed from a material such as,for example, but not limited to, silicon, germanium, silicon germanium,or another group III-V material (described below). In one embodiment,the original material of semiconductor body 104 in first region 110 maybe doped to form first region 110, and in second region 120 may be dopedto form second region 120.

First region 110 and second region 120 may be formed of the sameconductivity type, such as N-type or P-type conductivity. In anembodiment, first region 110 and second region 120 may have a dopingconcentration of between about 1×10¹⁹ atoms/cm³ and about 1×10²¹atoms/cm³. First region 110 and second region 120 may be formed of auniform concentration or may be sub-regions of different concentrationsor doping profiles. For example, semiconductor device 100 may be asymmetrical transistor, in which case first region 110 and second region120 may include the same doping concentration and profile.Alternatively, semiconductor device 100 may be an asymmetric transistor,in which case the doping concentration and profile of first region 110and second region 120 may vary in order to obtain a particularelectrical characteristic.

Semiconductor device 100 may further include first conductive contact112 formed on first surface 106 of semiconductor body 104 above firstregion 110. In an embodiment, first conductive contact 112 may be formedon an exposed surface of semiconductor body 104, where the exposedsurface may be on first region 110. In another embodiment, firstconductive contact 112 may be formed on an exposed surface of firstregion 110. An exposed surface on or within first region 110 on whichfirst conductive contact 112 may be formed may be referred to as a firstcontact area or as a contact area. The first contact area may be wherefirst region 110 may be coupled with first conductive contact 112. In anembodiment, first conductive contact 112 may be deposited onto firstsurface 106 of semiconductor body 104 with no etching necessary. Inanother embodiment, first conductive contact 112 may be formed afterrecess etching semiconductor body 104 above at least a portion of firstregion 110 and depositing first conductive contact 112 on an exposedsurface of first region 110.

Second region 120 may include, as illustrated in FIG. 1B, sub-region122. Sub-region 122 may include a blanket dopant 124, which may also bereferred to as a blanket source-drain dopant. In an embodiment,sub-region 122 may be at the bottom of second region 120. Althoughembodiments herein may describe sub-region 122 as being at the bottom ofsecond region 120, sub-region 122 may be at the top of or at a side ofsecond region 120 if semiconductor device 100 is at a differentorientation than shown in FIG. 1A. In an embodiment, sub-region 122 maybe defined by an area that includes area 122A and area 122B, as shown inFIG. 1B, where area 122A may be a sub-fin region and where area 122B maybe an epitaxial region. Further, area 122A of sub-region 122 may have aheight L′, and sub-region 122 may have a height H_(SR). In anembodiment, the height L′ of area 122A may be in a range from andincluding 5 nanometers (nm) to and including 40 nm, measured as shown inFIG. 1B. Further, H_(SR) may be in a range from and including 5 nm toand including 100 nm. If semiconductor device 100 is at a differentorientation than depicted in FIG. 1A and FIG. 1B, heights L′ and H_(SR)may be measured as if semiconductor device 100 was oriented as shown inFIG. 1A and FIG. 1B. Further, although embodiments herein may describeheights such as L′ and H_(SR), other heights described below, suchheights may be widths or depths or thicknesses if semiconductor device100 is at a different orientation than shown in FIG. 1A.

In an embodiment, blanket dopant 124 may be implanted into second region120 via area 122A of sub-region 122. Although embodiments herein depictblanket dopant 124 in area 122A and area 122B of sub-region 122, blanketdopant 124 may be concentrated in area 122B, or all or substantially allof blanket dopant 124 may be in area 122B. Further, blanket dopant 124may extend beyond sub-region 122, through, for example, diffusion. Forexample, blanket dopant 124 may extend into second region 120. Althoughsub-region 122 is depicted as including a rectangle shape and a diamondshape, sub-region 122 may have any other shape that may result as afunction of forming or otherwise processing sub-region 122 or secondregion 120. For example, sub-region 122 may have a mushroom-like shapeor any other shape. Although embodiments herein may include blanketdopant 124 that is adjacent to second conductive contact 170 (describedbelow), embodiments herein may include blanket dopant 124 that may be atleast partially within second conductive contact 170.

Blanket dopant 124 may be an implant that may dope second region 120 toeliminate, prevent, alleviate, reduce, or mitigate sub-fin leakage,which may be, for example, current leakage between a source region and adrain region of a transistor in an off-state. In an embodiment, blanketdopant 124 may be phosphorus if, for example, semiconductor device 100is an NMOS transistor. Although phosphorous is described as blanketdopant 124 for an NMOS transistor, blanket dopant 124 may includematerial such as, for example, but not limited to, nitrogen, antimony,or any group V material (described below). In another embodiment, theblanket dopant 124 may be boron, if, for example, semiconductor device100 is a PMOS transistor. Although boron is described as blanket dopant124 for a PMOS transistor, blanket dopant 124 for a PMOS transistor mayinclude other materials such as, for example, but not limited to,silicon, germanium, aluminum, gallium, indium, scandium, or any groupIII material (described below). Further, group III and group V materialsmay be dopants for group IV (described below) substrates, and group IVmaterials may be dopants for group III-V (described below) substrates.Blanket dopant 124 may be any material that may eliminate, prevent,alleviate, reduce, or mitigate sub-fin leakage, based at least in parton the type of substrate used to form (as described below) semiconductordevice 100 and the type of dopant used to create first region 110 andsecond region 120.

Blanket dopant 124 may be formed by any suitable deposition or implantprocess, such as, for example, but not limited to, an epitaxial chemicalvapor deposition process or other deposition process, such as, forexample, but not limited to, atomic layer deposition (ALD),plasma-enhanced chemical vapor deposition (PECVD), physical vapordeposition (PVD), high-density plasma (HDP)-assisted chemical vapordeposition (CVD), or low-temperature CVD.

A portion of semiconductor body 104 located between first region 110 andsecond region 120 may define a channel region 130 of semiconductordevice 100. Thus, first region 110 may be adjacent to channel region 130on one side of channel region 130, which may be referred to as a firstside of channel region 130, and second region 120 may be adjacent tochannel region 130 on another side of channel region 130, which may bereferred to as a second side of channel region 130, that is opposite thefirst side of channel region 130. The first side of channel region 130may be a left side of channel region 130, and the second side of channelregion 130 may be a right side of channel region 130. Alternatively, thefirst side of channel region 130 may be a right side of channel region130, and the second side of channel region 130 may be a left side ofchannel region 130. Although first region 110 and second region 120 aredescribed as being on a left side and a right side of channel region 130based on the orientation of semiconductor device 100 in FIG. 1A, firstregion 110 and second region 120 may be above and below each other atopposite sides of channel region 130 if semiconductor device 100 is at adifferent orientation than depicted in FIG. 1A.

In an embodiment, channel region 130 may be intrinsic or undopedmonocrystalline silicon. In another embodiment, channel region 130 maybe doped monocrystalline silicon. When channel region 130 is doped, itmay be doped to a conductivity level of between about 1×10¹⁶ atoms/cm³to about 1×10¹⁹ atoms/cm³. Further, when channel region 130 is doped, itmay be doped to the opposite conductivity type of the first region 110and second region 120. For example, first region 110 and second region120 may be N-type conductivity, in which case channel region 130 may bedoped to be P-type conductivity. As a result, semiconductor device 100may be formed into a negative-channel MOS (NMOS) transistor. Similarly,for example, first region 110 and second region 120 may be P-typeconductivity, in which case channel region 130 may be doped to be N-typeconductivity. As a result, semiconductor device 100 may be formed into apositive-channel (PMOS) transistor. Channel region 130 may be uniformlydoped. Alternatively, channel region 130 may be doped non-uniformly orwith differing concentrations to provide particular electrical andperformance characteristics.

Semiconductor device 100 may further include a gate structure 140 formedover channel region 130. Gate structure 140 may be formed over firstsurface 106 and a pair of sidewalls of the portion of the semiconductorbody 104 that is above channel region 130. Accordingly, channel region130 described above may be defined as an area of semiconductor body 104surrounded by gate structure 140. Although channel region 130 is betweenfirst region 110 and second region 120, first region 110 and secondregion 120 may extend beneath gate structure 140 to define a channelregion 130 that may be smaller than the width of gate structure 140.

Gate structure 140 may include a gate electrode layer (not shown) and agate dielectric layer (not shown). In an embodiment, the gate electrodelayer may be formed from a wide range of suitable metals or metalalloys, including a material such as, for example, but not limited to, ametal nitride, metal carbide, metal silicide, metal aluminide, hafnium,zirconium, titanium, titanium nitride, tantalum, tantalum nitride,aluminum, tungsten, copper, ruthenium, palladium, platinum, cobalt,nickel, or conductive metal oxides. In an embodiment, the gatedielectric layer may be formed from a material such as, but not limitedto, hafnium oxide, hafnium oxy-nitride, hafnium silicate, hafniumsilicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconiumoxide, zirconium silicate, zirconium silicon oxide, tantalum oxide,titanium oxide, barium strontium titanate, barium titanate, bariumtitanium oxide, strontium titanate, strontium titanium oxide, bariumstrontium titanium oxide, yttrium oxide, aluminum oxide, lead scandiumtantalum oxide, lead zinc niobate, or a combination thereof.

Gate structure 140 may further include a pair of spacers 142, with onespacer on either side of gate structure 140, where spacers 142 areformed on the sidewalls of gate structure 140. Spacers 142 may be formedfrom any suitable electrical insulator, dielectric, oxide, or nitridematerial. For example, spacers 142 may be formed from, but not limitedto, silicon dioxide, silicon oxy-nitride, or silicon nitride. Althoughspacers 142 are depicted as including a single layer, spacers 142 mayinclude more than one layer, to, for example, tailor the electricalproperties (e.g., dielectric constant) of spacers 142 or tailor one ormore physical dimensions.

Accordingly, first region 110 and second region 120 may be disposed insemiconductor body 104, and first conductive contact 112 may be disposedon first region 110. Further, semiconductor body 104 may include channelregion 130 of semiconductor device 100 and may be disposed between firstregion 110 and second region 120. Gate structure 140 may be disposed onand over semiconductor body 104, and gate spacers 142 may be disposed oneither side of gate structure 140. Although the sidewalls of firstregion 110 and second region 120 are depicted as being relativelystraight and vertical, the sidewalls of first region 110 and secondregion 120 may be faceted or curvilinear or any other shape that mayresult as a function of the processing of first region 110 and secondregion 120. Further, first region 110 and second region 120 may extendunder respective spacers 142 or under respective spacers 142 and gatestructure 140.

Semiconductor device 100 may further include an SOI 150 at the bottom offirst region 110. In an embodiment, at least a first portion of SOI 150may be adjacent to at least a first portion of PCD 160 (described below)and at least a second portion of SOI 150 may be adjacent to at least afirst portion of second conductive contact 170 (described below). Inanother embodiment, at least a portion of SOI 150 may be adjacent to atleast a portion of PCD 170 and at least a portion of second conductivecontact 170. SOI 150 may be in direct physical contact with PCD 160and/or second conductive contact 170 or at least a portion of PCD 160and/or second conductive contact 170, or indirect contact with PCD 160and/or second conductive contact 170 or at least a portion of PCD 160and/or second conductive contact 170 (e.g., having one or more otherelements between SOI 150 and second conductive contact 170) or not incontact with PCD 160 or second conductive contact 170. Althoughembodiments herein may describe SOI 150 as being at the bottom of firstregion 110, SOI 150 may be at the top of or at a side of first region110 if semiconductor device 100 is at a different orientation than shownin FIG. 1A. In an embodiment, at least a portion of SOI 150 may extendinto channel region 130, provided that semiconductor device 100 is ableto operate as intended, for example, have the current flow describedbelow, when semiconductor device 100 is an “on” state. In anotherembodiment, SOI 150 may extend into channel region 130 and into secondregion 120, provided that semiconductor device 100 is able to operate asintended, for example, have the current flow described below, whensemiconductor device 100 is an “on” state. In an embodiment, SOI 150 maybe inside first region 110. In another embodiment, SOI 150 may include aportion that is inside semiconductor body 104 and a portion that isoutside of semiconductor body 104.

In an embodiment, SOI 150 may have a height between 2 nm and 115 nm,such as, for example, between 2 nm and 3 nm. Further, SOI 150 may have aheight that is at least as equal to or that is at least approximately orsubstantially equal to the height of second conductive contact 170. SOI150 may have a uniform height, or SOI 150 may have varying height, inthat, for example, SOI 150 may have a certain height at a portionadjacent to conductive contact 170 and a different height or heights ata portion or portions that are not adjacent to conductive contact 170.Thus, all or part of SOI 150 may be formed to a height that is at leastequal to, at least approximately equal to, or at least substantiallyequal to the height of second conductive contact 170.

SOI 150 may be composed of a semiconductor material suitable forsemiconductor device fabrication and an insulation material. Thesemiconductor material may be formed from a material such as, forexample, but not limited to, a lower bulk substrate composed of a singlecrystal of a material which may include, but is not limited to, silicon,germanium, silicon-germanium or a group III-V (defined below) compoundsemiconductor material. The insulation material may be formed from amaterial that may include, for example, but is not limited to, silicondioxide, silicon nitride or silicon oxy-nitride disposed on thesemiconductor material.

Semiconductor device 110 may further include PCD 160 formed in channel130. FIG. 1A and FIG. 1C illustrate PCD 160. PCD 160 may be a dopedregion formed in channel region 130. In an embodiment, PCD 160 may beimplanted into channel 130 via an area that has the height L′ describedpreviously in connection with sub-region 122. PCD 160 may have a heightbetween 5 nm and 100 nm.

Although semiconductor device 100 is described as including both SOI 150and PCD 160, embodiments herein may include a semiconductor device 100that includes one or the other. For example, in an embodiment,semiconductor device 100 may include an SOI 150 but not a PCD 160.Further, for example, in another embodiment, semiconductor device 100may include a PCD 160 but not an SOI 150. Further, the combination ofboth SOI 150 and PCD 160, or SOI 150 by itself, or PCD 160 by itself maybe referred to as a leakage barrier.

In an embodiment, at least a first portion of PCD 160 may be adjacent toat least a first portion of SOI 150, if semiconductor device 100includes both SOI 150 and PCD 160. In another embodiment, at least aportion of PCD 160 may be adjacent to at least a portion of SOI 150, ifsemiconductor device 100 includes both SOI 150 and PCD 160. PCD 160 maybe in direct physical contact with the first portion of or at least aportion of SOI 150 or indirect contact with the first portion of or atleast a portion of SOI 150 (e.g., having one or more other elementsbetween PCD 160 and SOI 150) or not in contact with SOI 150. PCD 160 maybe formed within channel region 130. However, PCD 130 may extend intosecond region 120 and be formed at a junction between channel region 130and second region 120. Further, PCD 160 may extend into first region110, and may be formed at a junction between channel region 130 andfirst region 110.

In an embodiment, at least a second portion of PCD 160 may be adjacentto at least a second portion of second conductive contact 170 (describedbelow). In another embodiment, at least a portion of PCD 160 may beadjacent to at least a portion of second conductive contact 170. In anembodiment, PCD 160 may be above second conductive contact 170. Althoughembodiments herein may describe PCD 160 as being above second conductivecontact 170, PCD 160 may be below second conductive contact 170 or tothe side of second conductive contact 170 if semiconductor device 100 isat a different orientation than shown in FIG. 1A. PCD 160 may be indirect physical contact with second conductive contact 170 or indirectcontact with second conductive contact 170 (e.g., having one or moreother elements between PCD 160 and second conductive contact 170) or notin contact with second conductive contact 170. Although embodimentsherein may include PCD 160 that is adjacent to second conductive contact170, embodiments herein may include PCD 160 that is at least partiallywithin second conductive contact 170. PCD 160 may be of the sameconductivity as channel region 130, but of a higher concentration, thanthe doping of channel region 130. PCD 160 may be formed byion-implanting dopants beneath gate structure 140 by using, for example,tilted ion-implantation or titled dopant-implantation techniques, or,for example, angled ion-implantation or angled dopant-implantationtechniques.

PCD 160 may be phosphorus or boron. PCD 160 may be any material that mayeliminate, prevent, alleviate, reduce, or mitigate sub-fin leakage,which is described above, based at least in part on the type ofsubstrate used to form (as described below) semiconductor device 100 andthe type of dopant used to create first region 110 and second region120. For example, if semiconductor device 100 includes a source regionand a drain region that are N-type conductivity, the PCD 160 may bephosphorus. Although phosphorous is described as blanket dopant 124 foran NMOS transistor, blanket dopant 124 may include material such as, forexample, but not limited to, nitrogen, antimony, or any group V material(described below). Further, for example, if semiconductor device 100includes a source region and a drain region that are P-typeconductivity, the PCD 160 may be boron. Although boron is described asblanket dopant 124 for a PMOS transistor, blanket dopant 124 for a PMOStransistor may include other materials such as, for example, but notlimited to, silicon, germanium, aluminum, gallium, indium, scandium, orany group III material (described below).

Semiconductor device 100 may further include second conductive contact170 formed on a bottom portion of sub-region 122. In an embodiment,second conductive contact 170 may be formed on an exposed surface of thebottom portion of sub-region 122. In another embodiment, secondconductive contact 170 may be formed on an exposed surface of secondregion 120 below sub-region 122. An exposed surface on the bottomportion of sub-region 122 on which second conductive contact 170 may beformed or an exposed surface of second region 120 on which secondconductive contact 170 may be formed may be referred to as a secondcontact area or as a contact area. The second contact area may be wheresub-region 122 may be coupled with second conductive contact 170.

In an embodiment, at least a first portion of second conductive contact170 may be adjacent to at least a second portion of SOI 150, ifsemiconductor device 100 includes SOI 150. Further, at least a secondportion of second conductive contact 170 may be adjacent to at least asecond portion of PCD 160, if semiconductor device 100 includes PCD 160.In an embodiment, second conductive contact 170 may be deposited on thebottom portion of sub-region 122 with no etching or polishing necessary.In another embodiment, second conductive contact 170 may be formed, forexample, after etching (which may be, for example, but not limited to, adry etch, a wet etch, or both) or polishing (which may be, for example,be not limited to, a chemical polish, a mechanical polish, or achemical-mechanical polish (CMP)) semiconductor body 104 or a substratewithin at least a portion of second region 120 and depositing secondconductive contact 170 on an exposed surface of sub-region 122 or on anexposed surface of second region 120.

In an embodiment, first conductive contact 112 may be a drain contact,and second conductive contact 170 may be source contact. In anotherembodiment, first conductive contact 112 may be a source contact, andsecond conductive contact 170 may be a drain contact. First conductivecontact 112 and second conductive contact 170 may be formed from a puremetal, such as, for example, but not limited to, titanium, tungsten,nickel, copper, or cobalt or any other suitable metal, or may be analloy such as, for example, but not limited to, a metal-metal alloy or ametal-semiconductor alloy, such, for example, a silicide that may beformed, for example, by reacting a metal with silicon or silicongermanium. Although first conductive contact 112 is shown on firstsurface 106 of semiconductor body 104, first conductive contact 112 maybe located on second surface 108 of semiconductor body 104. For example,SOI 150 may be etched to create a contact area for deposition of firstconductive contact 112.

The contact area for second conductive contact 170 may be enhanced dueto the presence of blanket dopant 124, SOI 150, and PCD 160, or anycombination thereof, or any one of these elements by itself, in that,for example, the contact area for second conductive contact 170 may belarger than the contact areas of conventional non-planar transistors.Further, for example, the contact area for second conductive contact 170may be an enhanced contact area in that it may be larger than thecontact area for first conductive contact 112, or, for example, thecontact area for second conductive contact 170 may be larger than ifsecond conductive contact 170 was formed on first surface 106 abovesecond region 120.

First conductive contact 112, which may be, for example, a draincontact, may be contacted from a front side, and second conductivecontact 170, which may be, for example, a source contact, may becontacted from a back side. Blanket dopant 124 may dope sub-region 122,which may be referred to as HSI, which may be, for example, a height ofsemiconductor body 104 measured from first surface 106, and blanketdopant 124 may be provided on a side of semiconductor body 104 thatincludes a source region (or a drain region), to eliminate, alleviate,prevent, mitigate, or reduce sub-fin leakage. Accordingly, the contactarea for second conductive contact 170 may be increased by usingavailable real estate below HSI on one side, which may be, for example,the source side, of semiconductor device 100. As a result, source sidecontact resistance, which may be the dominant resistance in “on” statefor a transistor, may be alleviated. Although the contact area may beincreased by using available real estate below HSI below a source sideof semiconductor device 100, the contact area for a contact at a drainside of a semiconductor device 100 may be enhanced to alleviate drainside contact resistance.

Sub-fin leakage, which is described above, may be eliminated,alleviated, prevented, mitigated, or reduced by blanket dopant 124, SOI150, or PCD 160, or a combination thereof or any one of these elementsby itself, though the contact area for second conductive contact 170 maynot be as large if semiconductor device 100 includes SOI 150 without PCD160 or PCD 160 without SOI 150, than if semiconductor device 100includes both SOI 150 and PCD 160. For example, blanket dopant 124 mayenter a sub-fin at a source side of semiconductor device 100. Further, amask may be used to form SOI 150 at the bottom of or below the side ofsemiconductor body 104 that includes a drain region, if sub-region 122is at the bottom of or below a side of semiconductor body 104 thatincludes a source region (or SOI 150 may be provided at the bottom of orbelow a side of semiconductor device 100 that includes a source region,if sub-region 122 is at the bottom of or below a side of semiconductorbody 104 that includes a drain region), and thus create an SOI at adrain side only, rather than at a source side, or primarily below adrain side (or a source side only, rather than at a drain side, orprimarily below a source side, if sub-region 122 is at the bottom of orbelow a side of semiconductor body 104 that includes a drain region).Further, PCD 160 may be formed by tilted or blanket source (or drain, ifsub-region 122 is below a side of semiconductor body 104 that includes adrain region) dopant implants, for example, phosphorus for an NMOSdevice and boron for a PMOS device. Further, a conductive contact may beformed by contact metal deposition, for example, in the contact areathat is an enhanced contact area, which may be, for example, the contactarea at a source side, or may be, for example, the contact area at adrain side.

As a result, drain-to-source leakage (or also source-to-drain leakage)below an active fin may be shut off using SOI 150 and/or PCD 160placement, and the size of the contact area for second conductivecontact 170 may be increased or enhanced relative to a non-planartransistor that is not formed in the same manner as semiconductor device100. For example, depending on the amount of fin real estate on forexample, a back side, significant improvement in contact area may beachieved. For example, the contact area for second conductive contact170 may be doubled for a 25 nm remaining fin on a back side, and if thefront side dimension is approximately 50 nm, 25 nm of extra fin on theback side would provide, for example, a 50 nm perimeter increase for thecontact area. In an embodiment, if, for example, area 122A of sub-finregion 122 has a height L′, as shown in FIG. 1B, total contact area as aresult of contact area enhancement may be, for example, L_(CA) equalstwo times L′ (or L_(CA)=2*L′), where L_(CA) may be a total length of thecontact area for conductive contact 170, which may be the sum of L_(CA1)and L_(CA2) shown in FIG. 1B. Although embodiments may include a totalcontact area of L_(CA) equals two times L′ (or L_(CA)=2*L′), embodimentsherein may include a total contact area of approximately two times L′(or 2*L′), or may include a total contact area of up to and includingtwo times L′ (or 2*L′). Further, although embodiments may include L_(CA)as a sum of L_(CA1) and L_(CA2), embodiments may include L_(CA) as a sumof any portions of sub-region 122 or of the lengths of any portions ofsub-region 122 that are in contact with second conductive contact 170 orcoupled with second conductive contact 170.

If sub-region 122 was undoped or doped with the same dopants as secondregion 120, off-state current flow or off-state leakage may occur.Further, based on rough resistance partitioning, this may provide, forexample, approximately 25% linear-region drain current (Idlin) gain andapproximately 12.5% saturation-region drain current (Idsat) gain, whichmay be even larger in smaller pitches. Although the contact area forsecond conductive contact 170 is described as the enhanced contact area,the contact area for first conductive contact 112 may be the enhancedcontact area, or both the contact area for first conductive contact 112and the contact area for second conductive contact 170 may be enhancedcontact areas.

In embodiments herein, current flow for semiconductor device 100 may beas follows when gate structure 140 is in an “on” state. A current mayflow from second conductive contact 170 to second region 120, acrosschannel region 130, to first region 110, and to first conductive contact112. Although current flow is described as being from second conductivecontact 170 to first conductive contact 112 when gate structure 140 isin the “on” state, embodiments herein may include current flow fromfirst conductive contact 112 to first region 110, across channel region130, to second region 120, and to second conductive contact 170, whengate structure 140 is in the “on” state.

FIGS. 2A, 2B, 2C, 2D, 2E, and 2F illustrate stages of the formation of asemiconductor device illustrated in FIG. 1A, in accordance with variousembodiments. As shown in FIG. 2A, a starting structure for the formationof semiconductor device 100 may include a substrate 102. Substrate 102may be formed from any suitable material for semiconductor devicefabrication. In some embodiments, substrate 102 may be a bulk substratethat may include a group IV semiconductor material (e.g., Si, Ge, SiGe),group III-V semiconductor material, or any other suitable material ormaterials; an X-on-insulator (XOI) structure where X is one of theaforementioned materials (e.g., group IV and/or group III-Vsemiconductor material) and the insulator material is an oxide materialor dielectric material or some other electrically insulating material,such that the XOI structure includes the electrically insulatingmaterial layer between two semiconductor layers; or some other suitablemultilayer structure where the top layer includes one of theaforementioned semiconductor materials (e.g., group IV or group III-Vsemiconductor material). The use of “group IV semiconductor material”(or “group IV material” or generally, “IV”) herein may include at leastone group IV element (e.g., silicon, germanium, carbon, tin), such as,for example, but not limited to, silicon (Si), germanium (Ge), silicongermanium (SiGe), and so forth. The use of “group III-V semiconductormaterial” (or “group III-V material” or generally, “III-V”) herein mayinclude at least one group III element (e.g., aluminum, gallium, indium)and at least one group V element (e.g., nitrogen, phosphorus, arsenic,antimony, bismuth), for example, but not limited to, gallium arsenide(GaAs), indium gallium arsenide (InGaAs), indium aluminum arsenide(InAlAs), gallium phosphide (GaP), gallium antimonide (GaSb), indiumphosphide (InP), and so forth. The use of “group V semiconductormaterial” (or “group V material” or generally, “V”) herein may includeat least one group V element, such as, for example, but not limited to,nitrogen, phosphorus, arsenic, antimony, bismuth, and so forth.

For example, substrate 102 may be formed from, for example, acrystalline substrate formed using silicon, or, for example, substrate102 may be formed using a material such as, for example, but not limitedto, germanium, silicon germanium, indium antimonide, lead telluride,indium arsenide, indium phosphide, gallium phosphide, gallium arsenide,indium gallium arsenide, gallium antimonide, or other combinations ofgroup III-V compound semiconductor materials. Although a few examples ofmaterials from which substrate 102 may be formed are described here, anymaterial that may serve as a foundation upon which a semiconductordevice may be built may be used.

As further shown in FIG. 2A, substrate 102 may include one or moresemiconductor bodies 104 formed on substrate 102. Although FIG. 2A showsfour semiconductor bodies 104, embodiments herein are not limited to asemiconductor device 100 that includes four semiconductor bodies 104.Semiconductor device 100 may include any number of semiconductor bodies104, whether one semiconductor body 104 or more than one semiconductorbody 104. In an embodiment, semiconductor body 104 may be formed fromthe same material as substrate 102. In another embodiment, semiconductorbody 104 may be formed from material that is different than the materialused to form substrate 102.

As shown in FIG. 2A and FIG. 2B, semiconductor device 100 may furtherinclude first region 110, first conductive contact 112, second region120, channel region 130, gate structure 140, and spacers 142.Semiconductor body 104, first region 110, first conductive contact 112,second region 120, channel region 130, gate structure 140, and spacers142 are described above in connection with FIG. 1A. As shown inconnection with FIGS. 2B-2F, substrate 102 may be removed during theformation of semiconductor device 100. Substrate 102 may be removed byany technique, such as, for example, but not limited to, a grindprocess, a polish process, a wet etch process, a dry etch process, or acleaving process. Although embodiments herein may include asemiconductor device 100 that does not include a substrate 102,embodiments herein may include a semiconductor device 100 that mayinclude at least a portion of a substrate 102.

As shown in FIG. 2C and FIG. 2D, semiconductor device 100 may furtherinclude the structure of FIG. 2B that may include sub-region 122 andblanket dopant 124. Sub-region 122 and blanket dopant 124 are describedabove in connection with FIG. 1A and FIG. 1B.

As shown in FIG. 2E, semiconductor device 100 may further include thestructure of FIG. 2C that may include SOI 150 and PCD 160. SOI 150 andPCD 160 are described above in connection with FIGS. 1A and 1C.

As shown in FIG. 2F, semiconductor device 100 may further include thestructure of FIG. 2E that may include second conductive contact 170.Second conductive contact 170 is described above in connection with FIG.1A. Although embodiments herein may include a semiconductor device 100that does not include second surface 108, embodiments herein may includea semiconductor device 100 that may include at least a portion of asecond surface 108.

FIG. 3 illustrates an operation flow for forming the semiconductordevice illustrated in FIG. 1A. Operation flow 300 may include, at 302,forming semiconductor body 104 that includes first surface 106.Operation flow 300 may include, at 304, forming first region 110 andsecond region 120 in semiconductor body 104, where channel region 130 isdefined in semiconductor body 104 between first region 110 and secondregion 120. Operation flow 300 may include, at 306, providing blanketdopant 124 in sub-region 122 of second region 120. Operation flow 300may include, at 308, forming first conductive contact 112 on firstsurface 106 above first region 110. In an embodiment, operation flow 300may further include forming gate structure 140 and spacers 142.

Operation flow 300 may further include, at 310, forming SOI 150 at abottom of first region 110. Operation flow 300 may further include, at312, providing PCD 160 in channel region 130, where a first portion ofPCD 160 may be adjacent to a first portion of SOI 150. Operation flow300 may further include, at 314, forming second conductive contact 170on a bottom portion of sub-region 122, where a first portion of secondconductive contact 170 may be adjacent to a second portion of SOI 150and a second portion of second conductive contact 170 may be adjacent toa second portion of PCD 160.

FIG. 4 illustrates another semiconductor device, in accordance withvarious embodiments. Like semiconductor device 100, semiconductor device400, may be, for example, any type of non-planar transistor, such as,for example, but not limited to, tri-gate transistor, a FINFET, a TFET,an omega-FET, a double-gate transistor, or a nanowire. In an embodiment,like semiconductor device 100, semiconductor device 400 may be a MOSFETthat may be a three-dimensional MOSFET. Other than as described inconnection with FIG. 4, semiconductor device 400 is the same assemiconductor device 100 described above.

Semiconductor device 400 may include semiconductor body 404.Semiconductor device 400 may include any number of semiconductor bodies404, whether one semiconductor body 404 or more than one semiconductorbody 404. Semiconductor body 404 may include first surface 406, firstregion 410, first conductive contact 412, second region 420, channelregion 430, gate structure 440, and spacers 442. Semiconductor body 404,first surface 406, first region 410, first conductive contact 412,second region 420, channel region 430, gate structure 440, and spacers442 are the same as corresponding elements semiconductor body 104, firstsurface 106, first region 110, first conductive contact 112, secondregion 120, channel region 130, gate structure 140, and spacers 142described above in connection with FIG. 1A.

Semiconductor device 400 may further include an SOI 450 at a bottom offirst region 410, where at least a portion of SOI 450 may be adjacent toat least a portion of PCD 460 (described below). At least a portion ofSOI 450 may be in direct physical contact with PCD 460 or indirectcontact with at least a portion of second conductive contact 460 (e.g.,having one or more other elements between SOI 450 and PCD 460) or not incontact with PCD 460. Other than as described in connection with FIG. 4,SOI 450 is the same as corresponding element SOI 150 described above inconnection with FIG. 1A.

Semiconductor device 400 may further include PCD 460. PCD 460 may be adoped region formed in channel region 430. In an embodiment, PCD 460 maybe implanted into channel 430 via an area that has the height L′described previously in connection with sub-region 122. Althoughsemiconductor device 400 is described as including both SOI 450 and PCD460, embodiments herein may include a semiconductor device 400 thatincludes one or the other. Further, the combination of both SOI 450 andPCD 460, or SOI 450 by itself, or PCD 460 by itself may be referred toas a leakage barrier.

At least a portion of PCD 460 may be adjacent to at least a portion ofSOI 450, if semiconductor device 400 includes both SOI 450 and PCD 460.At least a portion of PCD 460 may be in direct physical contact with atleast a portion of SOI 450 or indirect contact with at least a portionof SOI 450 (e.g., having one or more other elements between PCD 460 andSOI 450) or not in contact with SOI 450. PCD 460 may be formed withinchannel region 430. However, PCD 430 may extend into second region 420and be formed at a junction between channel region 430 and second region420. Further, PCD 460 may extend into first region 410, and may beformed at a junction between channel region 430 and first region 410.

PCD 460 may be adjacent to SOI 450 at one side of PCD 460, and PCD 460may be adjacent to second conductive contact 470 (described below) at anopposite side of PCD 460, where at least a portion of PCD 460 may beadjacent to at least a portion of second conductive contact 470. PCD 460may be in direct contact with at least a portion of SOI 450 or at leasta portion of second conductive contact 470 or both, or indirect contactwith at least of portion of SOI 450 or at least a portion of secondconductive contact 470 or both (e.g., having one or more other elementsbetween SOI 450 or second conductive contact 470 or both) or not incontact with SOI 450 or second conductive contact 470 or both. Althoughembodiments herein may include PCD 460 that is adjacent to secondconductive contact 470, embodiments herein may include PCD 460 that isat least partially within second conductive contact 470. Other than asdescribed in connection with FIG. 4, PCD 460 is the same ascorresponding element PCD 160 described above in connection with FIG.1A.

Semiconductor device 400 may further include a second conductive contact470 formed on a bottom portion of sub-region 422. In an embodiment, atleast a portion of second conductive contact 470 may be adjacent to atleast a portion of PCD 460, if semiconductor device 400 includes PCD 460and SOI 450. In another embodiment, at least a portion of secondconductive contact 470 may be adjacent to at least a portion of SOI 450,if semiconductor device 400 includes SOI 450 and not PCD 460. Other thanas described in connection with FIG. 4, second conductive contact 470 isthe same as corresponding element second conductive contact 170described above in connection with FIG. 1A.

FIG. 5 illustrates an example electronic device, in accordance withvarious embodiments. Electronic device 500 may be, for example, a mobilecommunication device or a desktop or rack-based electronic device. Theelectronic device 500 may include a motherboard, such as motherboard502, which may also be referred to as a board. Board 502 may include anumber of components, including, but not limited to, a processor 504, astorage device 506, and at least one communication chip 508.

Depending on its applications, computing system 500 may include one ormore other components that may or may not be physically and electricallycoupled to the board 502. These other components may include, but arenot limited to, a graphics processor, a digital signal processor, acrypto processor, a chipset, an antenna, a display, a touchscreendisplay, a touchscreen controller, a battery, an audio codec, a videocodec, a power amplifier (amp), a global positioning system (GPS)device, a compass, an accelerometer, a gyroscope, a speaker, a camera,and a mass storage device (such as hard disk drive, compact disk (CD),digital versatile disk (DVD), and so forth).

The processor 504 of the electronic device 500 may include one or moredevices in accordance with various embodiments described herein, such assemiconductor device 100 or semiconductor device 400 in accordance withvarious embodiments described herein. The term “processor” may refer toany device or portion of a device that processes electronic data fromregisters and/or memory to transform that electronic data into otherelectronic data that may be stored in registers and/or memory.

The electronic device 500 may include a storage device 506. In someembodiments, the storage device 506 may include one or more solid statedrives. Examples of storage devices that may be included in the storagedevice 506 include, but are not limited to, volatile memory (e.g.,dynamic random access memory (DRAM)), non-volatile memory (e.g.,read-only memory, ROM), flash memory, and mass storage devices (such ashard disk drives, compact discs (CDs), digital versatile discs (DVDs),and so forth). FIG. 6 illustrates a processor 602 coupled with a memory604, where processor 602 may include various embodiments ofsemiconductor device 100. Processor 602 may also include variousembodiments of semiconductor device 400.

The communication chip 508 and the antenna may enable wirelesscommunications for the transfer of data to and from the electronicdevice 500. The term “wireless” and its derivatives may be used todescribe circuits, devices, systems, methods, techniques, communicationschannels, etc., that may communicate data through the use of modulatedelectromagnetic radiation through a non-solid medium. The term does notimply that the associated devices do not contain any wires, although insome embodiments they might not. The communication chip 508 mayimplement any of a number of wireless standards or protocols, includingbut not limited to Institute for Electrical and Electronic Engineers(IEEE) standards including Wi-Fi (IEEE 802.11 family), IEEE 802.16standards (e.g., IEEE 802.16-2005 Amendment), Long-Term Evolution (LTE)project along with any amendments, updates, and/or revisions (e.g.,advanced LTE project, ultra mobile broadband (UMB) project (alsoreferred to as “3GPP2”), etc.). IEEE 802.16 compatible broadband wideregion (BWA) networks are generally referred to as WiMAX networks, anacronym that stands for Worldwide Interoperability for Microwave Access,which is a certification mark for products that pass conformity andinteroperability tests for the IEEE 802.16 standards. The communicationchip 508 may operate in accordance with a Global System for MobileCommunications (GSM), General Packet Radio Service (GPRS), UniversalMobile Telecommunications System (UMTS), High Speed Packet Access(HSPA), Evolved HSPA (E-HSPA), or LTE network. The communication chip508 may operate in accordance with Enhanced Data for GSM Evolution(EDGE), GSM EDGE Radio Access Network (GERAN), Universal TerrestrialRadio Access Network (UTRAN), or Evolved UTRAN (E-UTRAN). Thecommunication chip 508 may operate in accordance with Code DivisionMultiple Access (CDMA), Time Division Multiple Access (TDMA), DigitalEnhanced Cordless Telecommunications (DECT), Evolution-Data Optimized(EV-DO), derivatives thereof, as well as any other wireless protocolsthat are designated as 3G, 4G, 5G, and beyond. The communication chip508 may operate in accordance with other wireless protocols in otherembodiments.

The electronic device 500 may include a plurality of communication chips508. For instance, a first communication chip 508 may be dedicated toshorter range wireless communications such as Wi-Fi and Bluetooth, and asecond communication chip 508 may be dedicated to longer range wirelesscommunications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, EV-DO, andothers. In some embodiments, the communication chip 508 may supportwired communications. For example, the electronic device 500 may includeone or more wired servers.

In various implementations, the electronic device 500 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the electronicdevice 500 may be any other electronic device that processes data. Insome embodiments, the recessed conductive contacts disclosed herein maybe implemented in a high-performance electronic device.

Some non-limiting examples are provided below.

EXAMPLES

Example 1 may include a semiconductor device, comprising: asemiconductor body that includes a surface; a first region and a secondregion formed in the semiconductor body, wherein a channel region islocated between the first region and the second region, and wherein thesecond region includes a sub-region that includes a blanket dopant; afirst conductive contact on the surface of the semiconductor body abovethe first region; a semiconductor-on-insulator (SOI) at a bottom of thefirst region; a pocket channel dopant (PCD) formed in the channel,wherein the PCD is adjacent to a first portion of the SOI; and a secondconductive contact on a bottom portion of the sub-region, wherein afirst portion of the second conductive contact is adjacent to a secondportion of the SOI, and wherein a second portion of the secondconductive contact is adjacent to a second portion of the PCD.

Example 2 may include the semiconductor device of Example 1 or someother example herein, wherein the first region is a source region andthe second region is a drain region.

Example 3 may include the semiconductor device of Example 1 or someother example herein, wherein the first region is a drain region and thesecond region is a source region.

Example 4 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the blanket dopant is phosphorus.

Example 5 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the blanket dopant is boron.

Example 6 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the blanket dopant has a heightbetween 5 nanometers (nm) and 100 nm.

Example 7 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the SOI has a height between 5 nm and115 nm.

Example 8 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the PCD is phosphorus.

Example 9 may include the semiconductor device of Example 1, 2, or 3, orsome other example herein, wherein the PCD is boron.

Example 10 may include a semiconductor device, comprising: asemiconductor body that includes a surface; a first region and a secondregion formed in the semiconductor body, wherein a channel region islocated between the first region and the second region, and wherein thesecond region includes a sub-region that includes a blanket dopant; afirst conductive contact on the surface of the semiconductor body abovethe first region; a leakage barrier; and a second conductive contact ona bottom portion of the sub-region, wherein at least a portion of thesecond conductive contact is adjacent to at least a portion of theleakage barrier.

Example 11 may include the semiconductor device of Example 10 or someother example herein, wherein the first region is a source region andthe second region is a drain region.

Example 12 may include the semiconductor device of Example 10, 11, orsome other example herein, wherein the blanket dopant is phosphorus orboron.

Example 13 may include the semiconductor device of claim 10, 11, or someother example herein, wherein the leakage barrier is asemiconductor-on-insulator (SOI), wherein the SOI is at a bottom of thefirst region.

Example 14 may include the semiconductor device of Example 10, 11, orsome other example herein, wherein the leakage barrier is a pocketchannel dopant (PCD) formed in the channel.

Example 15 may include the semiconductor device of Example 14 or someother example herein, wherein the PCD is phosphorus or boron.

Example 16 may include the semiconductor device of claim 10, 11, or someother example herein, wherein the leakage barrier comprises: an SOI,wherein the SOI is at a bottom the first region; and a PCD formed in thechannel, wherein a first portion of the PCD is adjacent to a firstportion of the SOI, a second portion of the SOI is adjacent to a firstportion of the second conductive contact, and a second portion of thePCD is adjacent to a second portion of the second conductive contact.

Example 17 may include the semiconductor device of Example 16 or someother example herein, wherein the PCD is phosphorus or boron.

Example 18 may include a system, comprising: a memory; and a processorcoupled with the memory, wherein the processor includes a semiconductordevice comprising: a semiconductor body that includes a surface; a firstregion and a second region formed in the semiconductor body, wherein achannel region is located between the first region and the secondregion, and wherein the second region includes a sub-region thatincludes a blanket dopant; a first conductive contact on the surface ofthe semiconductor body above the first region; asemiconductor-on-insulator (SOI) at a bottom of the first region; apocket channel dopant (PCD) formed in the channel, wherein the PCD isadjacent to a first portion of the SOI; and a second conductive contacton a bottom portion of the sub-region, wherein a first portion of thesecond conductive contact is adjacent to a second portion of the SOI,and wherein a second portion of the second conductive contact isadjacent to a second portion of the PCD.

Example 19 may include the system to Example 18 or some other exampleherein, wherein the first region is a source region and the secondregion is a drain region.

Example 20 may include the system to Example 18, 19, or some otherexample herein, wherein the blanket dopant is phosphorus or boron.

Example 21 may include the system to Example 18, 19, or some otherexample herein, wherein the PCD is phosphorus or boron.

Example 22 may include a method, comprising: forming a semiconductorbody that includes a surface; forming a first region and a second regionin the semiconductor body, wherein a channel region is defined in thesemiconductor body between the first region and the second region;providing a blanket dopant in a sub-region of the second region; forminga first conductive contact on the surface of the semiconductor bodyabove the first region; forming a semiconductor-on-insulator (SOI) at abottom of the first region; providing a pocket channel dopant (PCD) inthe channel, wherein a first portion of the PCD is adjacent to a firstportion of the SOI; and forming a second conductive contact on a bottomportion of the sub-region, wherein a first portion of the secondconductive contact is adjacent to a second portion of the SOI and asecond portion of the second conductive contact is adjacent to a secondportion of the PCD.

Example 23 may include the method to Example 22 or some other exampleherein, wherein the first region is a source region and the secondregion is a drain region.

Example 24 may include the method to Example 22, 23, or some otherexample herein, wherein the blanket dopant is phosphorus or boron.

Example 25 may include the method to Example 22, 23, or some otherexample herein, wherein the PCD is phosphorus or boron.

Various embodiments may include any suitable combination of theabove-described embodiments including alternative (or) embodiments ofembodiments that are described in conjunctive form (and) above (e.g.,the “and” may be “and/or”). Furthermore, some embodiments may includeone or more articles of manufacture (e.g., non-transitorycomputer-readable media) having instructions, stored thereon, that whenexecuted result in actions of any of the above-described embodiments.Moreover, some embodiments may include apparatuses or systems having anysuitable means for carrying out the various operations of theabove-described embodiments.

The above description of illustrated implementations, including what isdescribed in the Abstract, is not intended to be exhaustive or to limitthe embodiments of the present disclosure to the precise formsdisclosed. While specific implementations and examples are describedherein for illustrative purposes, various equivalent modifications arepossible within the scope of the present disclosure, as those skilled inthe relevant art will recognize.

These modifications may be made to embodiments of the present disclosurein light of the above detailed description. The terms used in thefollowing claims should not be construed to limit various embodiments ofthe present disclosure to the specific implementations disclosed in thespecification and the claims. Rather, the scope is to be determinedentirely by the following claims, which are to be construed inaccordance with established doctrines of claim interpretation.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor body that includes a surface; a first region and a secondregion formed in the semiconductor body, wherein a channel region islocated between the first region and the second region, and wherein thesecond region includes a sub-region that includes a blanket dopant; afirst conductive contact on the surface of the semiconductor body abovethe first region; a semiconductor-on-insulator (SOI) at a bottom of thefirst region; a pocket channel dopant (PCD) formed in the channel,wherein a first portion of the PCD is adjacent to a first portion of theSOI; and a second conductive contact on a bottom portion of thesub-region, wherein a first portion of the second conductive contact isadjacent to a second portion of the SOI, and wherein a second portion ofthe second conductive contact is adjacent to a second portion of thePCD.
 2. The semiconductor device of claim 1, wherein the first region isa source region and the second region is a drain region.
 3. Thesemiconductor device of claim 1, wherein the first region is a drainregion and the second region is a source region.
 4. The semiconductordevice of claim 1, wherein the blanket dopant is phosphorus.
 5. Thesemiconductor device of claim 1, wherein the blanket dopant is boron. 6.The semiconductor device of claim 1, wherein the blanket dopant has aheight between 5 nanometers (nm) and 100 nm.
 7. The semiconductor deviceof claim 1, wherein the SOI has a height between 5 nm and 115 nm.
 8. Thesemiconductor device of claim 1, wherein the PCD is phosphorus.
 9. Thesemiconductor device of claim 1, wherein the PCD is boron.
 10. Asemiconductor device, comprising: a semiconductor body that includes asurface; a first region and a second region formed in the semiconductorbody, wherein a channel region is located between the first region andthe second region, and wherein the second region includes a sub-regionthat includes a blanket dopant; a first conductive contact on thesurface of the semiconductor body above the first region; a leakagebarrier; and a second conductive contact on a bottom portion of thesub-region, wherein at least a portion of the second conductive contactis adjacent to at least a portion of the leakage barrier.
 11. Thesemiconductor device of claim 10, wherein the first region is a sourceregion and the second region is a drain region.
 12. The semiconductordevice of claim 10, wherein the blanket dopant is phosphorus or boron.13. The semiconductor device of claim 10, wherein the leakage barrier isa semiconductor-on-insulator (SOI), wherein the SOI is at a bottom ofthe first region.
 14. The semiconductor device of claim 10, wherein theleakage barrier is a pocket channel dopant (PCD) formed in the channel.15. The semiconductor device of claim 14, wherein the PCD is phosphorusor boron.
 16. The semiconductor device of claim 10, wherein the leakagebarrier comprises: an SOI, wherein the SOI is at a bottom the firstregion; and a PCD formed in the channel, wherein a first portion of thePCD is adjacent to a first portion of the SOI, a second portion of theSOI is adjacent to a first portion of the second conductive contact, anda second portion of the PCD is adjacent to a second portion of thesecond conductive contact.
 17. The semiconductor device of claim 16,wherein the PCD is phosphorus or boron.
 18. A system, comprising: amemory; and a processor coupled with the memory, wherein the processorincludes a semiconductor device comprising: a semiconductor body thatincludes a surface; a first region and a second region formed in thesemiconductor body, wherein a channel region is located between thefirst region and the second region, and wherein the second regionincludes a sub-region that includes a blanket dopant; a first conductivecontact on the surface of the semiconductor body above the first region;a semiconductor-on-insulator (SOI) at a bottom of the first region; apocket channel dopant (PCD) formed in the channel, wherein the PCD isadjacent to a first portion of the SOI; and a second conductive contacton a bottom portion of the sub-region, wherein a first portion of thesecond conductive contact is adjacent to a second portion of the SOI,and wherein a second portion of the second conductive contact isadjacent to a second portion of the PCD.
 19. The system of claim 18,wherein the first region is a source region and the second region is adrain region.
 20. The system of claim 18, wherein the blanket dopant isphosphorus or boron.
 21. The system of claim 18, wherein the PCD isphosphorus or boron.
 22. A method, comprising: forming a semiconductorbody that includes a surface; forming a first region and a second regionin the semiconductor body, wherein a channel region is defined in thesemiconductor body between the first region and the second region;providing a blanket dopant in a sub-region of the second region; forminga first conductive contact on the surface of the semiconductor bodyabove the first region; forming a semiconductor-on-insulator (SOI) at abottom of the first region; providing a pocket channel dopant (PCD) inthe channel, wherein a first portion of the PCD is adjacent to a firstportion of the SOI; and forming a second conductive contact on a bottomportion of the sub-region, wherein a first portion of the secondconductive contact is adjacent to a second portion of the SOI and asecond portion of the second conductive contact is adjacent to a secondportion of the PCD.
 23. The method of claim 22, wherein the first regionis a source region and the second region is a drain region.
 24. Themethod of claim 22, wherein the blanket dopant is phosphorus or boron.25. The method of claim 22, wherein the PCD is phosphorus or boron.